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BFP540FESD
NPN Silicon RF Transistor* * For ESD protected high gain low noise amplifier * Excellent ESD performance typical value 1000 V (HBM) * Outstanding Gms = 20 dB Noise Figure F = 0.9 dB * SIEGET 45 - Line * Pb-free (ROHS compliant) package 1) * Qualified according AEC Q101 * Short term description
3 4 1 2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type BFP540FESD
Maximum Ratings Parameter
Marking AUs 1=B
Pin Configuration 2=E 3=C 4=E
Symbol VCEO 4.5 4 VCES VCBO VEBO IC IB Ptot Tj TA T stg 10 10 1 80 8 250 150
Package TSFP-4
Value Unit V
-
Collector-emitter voltage TA > 0C TA 0C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation2) TS 80 C Junction temperature Ambient temperature Storage temperature
1Pb-containing 2T
mA mW C
-65 ... 150 -65 ... 150
package may be available upon special request
S is measured on the collector lead at the soldering point to the pcb
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BFP540FESD
Thermal Resistance Parameter Junction - soldering point 1) Symbol RthJS Value 280 Unit K/W
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain IC = 20 mA, VCE = 3.5 V, pulse measured
1For
Unit max. 10 100 10 170 V A nA A -
typ. 5 110
V(BR)CEO ICES ICBO IEBO hFE
4.5 50
calculation of RthJA please refer to Application Note Thermal Resistance
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BFP540FESD
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT IC = 50 mA, VCE = 4 V, f = 1 GHz Collector-base capacitance VCB = 2 V, f = 1 MHz, V BE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, V BE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Noise figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt IC = 5 mA, VCE = 2 V, f = 3 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz Power gain, maximum available1) IC = 20 mA, VCE = 2 V, ZS = ZSopt, ZL = ZLopt, f = 3 GHz Transducer gain IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 1.8GHz IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 3GHz Third order intercept point at output2) VCE = 2 V, I C = 20 mA, ZS = ZL = 50, f = 1.8GHz 1dB Compression point at output IC = 20 mA, VCE = 2 V, ZS = ZL = 50, f = 1.8GHz
1G
ma
21 -
30 0.16
0.26
GHz pF
Ccb
Cce
-
0.4
-
Ceb
-
0.55
-
F G ms 0.9 1.3 20 1.4 -
dB
dB
G ma
-
14.5
-
dB
|S21e|2 15.5 IP 3 P-1dB 18 13 24.5 11 -
dB
dBm
= |S21e / S12e| (k-(k-1)1/2 ), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
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Package TSFP-4
BFP540FESD
Package Outline
1.4 0.05 0.2 0.05
1.2 0.05 0.2 0.05
4 3
1
2
0.2 0.05 0.5 0.05 0.5 0.05
0.15 0.05
Foot Print
0.35
0.45
0.5
0.5
Marking Layout (Example)
Manufacturer
0.9
Pin 1
BFP420F Type code
Standard Packing
Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel
4
0.2
1.4 8
Pin 1
1.55
0.7
10 MAX. 0.8 0.05
0.55 0.04
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BFP540FESD
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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